Niels Anderskouv
Analyst · Ross Seymore with Deutsche Bank
Thank you, Tom. And welcome to everyone on the call. I'd like to share a few details on the acquisition and set out why it's important for GF and to our customers and how this will support our ambitions to become a leading foundry in the rapidly expanding gallium nitride power device sector. At its core, the integration of Tagore's technology IP is expected to enable GlobalFoundries to grow our capabilities in pursuit of two key objectives. Firstly, expanding our product portfolio by providing additional power handling features for our customers, and secondly, growing our serviceable, addressable market. From a technical perspective, GaN offers several advantages over traditional silicon-based semiconductors, particularly in power applications. This is due to its ability to operate at higher voltages, with faster switching speeds, at smaller die sizes, and with better thermal performance. With Tagore Technology, we can now target better power efficiency capability in an integrated solution. Perhaps the best way to think about this is to compare our integrated GaN offering to BCD technology. With the Tagore's capability, we plan to offer our customers the analog and digital content of BCD technology integrated with the superior power performance of GaN. These performance characteristics have been identified by our customers as key features for supporting applications across sectors such as automotive, aerospace and defense, renewable energy, fast charging infrastructure, and power management for data centers. As a result, we expect our SAM to grow by approximately $1.6 billion by 2030, and additionally, we're supporting our customers to target a substantial share of this SAM. By investing in GaN solutions, designed to push the boundaries of efficiency and performance in a right range of power applications, we are targeting opportunities to win with our customers across all of the end markets we serve. And we are already sampling our first generation 650 volt GaN products with 100 to 200 volt sampling expected to follow shortly. To achieve this goal, we'll be modernizing our manufacturing capabilities at our site in Burlington over the coming years. This modernization will be enabled with the expected support from the previously discussed grant award from the US Chips and Science Act along with continued investment in R&D to support a gradual ramp of our GaN manufacturing capacity over the next two to three years. Moreover, this acquisition aligns with GlobalFoundries' broader strategy to enable high volume manufacturing of critical technologies in power applications and to serve as a trusted manufacturing partner for our customers seeking to build the next generation of power management solutions here in the United States. I would like to welcome our new GF employees joining us as part of this acquisition and we look forward to taking the next step in this important growth opportunity for the company. With that, back to you, Tom.