Balu Balakrishnan
Analyst · Stifel Nicolaus. Your line is now open.
Thanks, Jeremy. Excellent question. Let me start with the 750 volt GaN, which primarily competes with the MOSFETs. And there, we think we're getting very close to being parity with even the high-end MOSFETs within the next year or so. And at 750 volts, we are also very cost competitive with silicon or silicon carbide. Of course, if you're cost competitive with silicon, you are dramatically cost competitive with silicon carbide. And these applications include AI data centers. It includes onboard charges for electric vehicles. It also includes telecom infrastructure. All of these are in the, I would say, 1 kilowatt to 20 kilowatt range, and we already have products in development. These products will be ready sometime in 2026, and that opens up a huge market for us. So with our existing 750 volt technology, we can be very competitive with silicon and, of course, much more competitive than silicon carbide all the way up to tens of kilowatts. Now when you go to higher voltages like 1250 volts and 1700 volts, the real competition is silicon carbide and we are very competitive with silicon carbide up to about 100 plus watts. Our products currently we've introduced are in the just under 100 watts and we are very competitive there. Now if you want to go to much higher power levels like 100 of kilowatts, that's where we need new technology. We are working on that for some time now and with the acquisition of Odyssey Semiconductor, we will be able to speed up the technology, because it comes with the fab, it also comes with people with the knowledge of the device and we have made a lot of progress on that. We have a few more breakthroughs to get there. And we are now beginning to feel that we can get there in the next to three to five years and when we get there, we'll have a very competitive offering compared to silicon carbide. It'll not only be lower cost than silicon carbide at those power levels, but it will also be much higher performance than silicon carbide and as you all know, silicon carbide requires lot of capital investment, whereas GaN does not and GaN inherently is going to be cost effective long term, because of the temperatures at which they are manufactured, which is similar to silicon and therefore, it doesn't require anywhere near the amount of energy consumption that silicon carbide requires. Silicon carbide, as many of you know, requires manufacturing at 2,000 degrees, which is about half the temperature of the sun by the way and it takes a lot of money, a lot of energy and lot of capital investment to do that and that is not the case for silicon for GaN. So we really think GaN would be the most attractive alternative to silicon carbide all the way up to several 100 kilowatts once we have this new technology up and running.