Thank you, Peter. I will focus my remarks first on the status of our technology development and start by our EUV program. Regarding the scanners themselves, EUV scanners themselves, we have now demonstrated production with the 10-nanometer node compatible imaging and overlay performance. Stability and reproducibility will certainly have to be improved as we prepare for production in 2014, but the specification target has certainly been reached now on the NXE:3300 platform. Regarding the source, significant progress has been made. The EUV light sources are now running at 55 watts with production-worthy dose control. This is equivalent to approximately 43 wafers per hour with a standard resist sensitivity. To put this performance into perspective, one should remember that, of course, we lost for the year in 2012, when the original source concept that we used to call NOMO was converted to a more robust concept called MOPA Pre. Since this concept changed, has been debugged, and it took a bit of time to do so, we have executed cycles of learnings as a standard in this industry, leading to continuously improved performance through optimization of the system software and hardware architecture. Our targeted production throughput for 2014 and commitment to customers since, in fact, last year, since 2012, remains at 69 wafers per hour, upgradable within 2 years to 125 wafers per hour. The current progress and achievement of 43 wafers per hour now, puts us well up to target to achieve our commitment. Indeed, the machines will require another year of continuous improvement to achieve the specification targets and, as already mentioned, production-worthy reproducibility and stability. However, the systems performance data is now confirmed, and the nodes for which EUV can make a significant contribution, namely a 19-nanometer DRAM on about 2 layers and the so-called -- this industry's so-called sub-14-nanometer logic, sometimes called 10-nanometer, sometimes called 7-nanometer, can be planned with EUV. These are the nodes on customer roadmap for wafer ramps in 2015 and IC volume production in 2016. Of particular interest is the logic node in this time frame as EUV can become disruptive. Indeed, customers can use EUV, either 1 or 2 layers, to reduce the manufacturing complexity and to improve processing cost. Or they can use EUV on 5 to 7 layers to support a full node scaling factor, up to 250% scaling factor. Or on 15 to 17 layers to support both scaling processing and cost reduction if you were to build up greenfield fabs. The customer choices between these alternatives, 1 to 2 layers, 5 to 7 or 15 to 17, will be key for their own competitiveness. That said, EUV can influence the processing cost on one hand; the process control difficulty on the other; the design rule simplification, very important in a foundry business; the scaling factor, the shrink factor, as we said; and overall chip electrical performance. So a lot of valuable performance differentiation can be achieved using EUV. The current steady progress of EUV technology makes the layers choice complicated, indeed, but potentially rewarding. As Peter already mentioned, our delivery planning through 2 system shipments and installing through this quarter and the third quarter and the remaining 9 of the first order batch of 11 to be shipped and installed between Q4 of this year and Q1 of 2014. We have additional commitments for 7 systems for 2014 deliveries. We are working on the exact production needs of the customers, but we'll be waiting for confirmation of specification before we close further orders above the 7. In parallel to EUV, we continue to support world-leading performance with ArF immersion systems. We shipped 5 of our new NXT:1960Bi system, the successor to the NXT:1950i system, already in Q1. These systems offer 20% improvement of overlay and focus control, as well as 30% improvement in CD uniformity, which supports -- which will support manufacturing at the so-called 20, 16 or 14 nanometer [indiscernible] logic nodes, with heavy multi-patterning required. In support of the immersion multi-patterning but also in EUV imaging specificity, we continue to focus our effort on process control products, these products that we call Holistic Lithography products, are beginning to be transferred from R&D to production at our customers, with business volume being significantly larger, obviously. For instance, we have had to expand our production facility for the YieldStar metrology tool to the ASML Center of Excellence in Taiwan to support production of up to 150 units per year, which is very large. We will have more than EUR 350 million of Holistic Lithography product sales in 2013. Also on the product front, supported by our Customer Co-Investment Program, we have completed the concepts for our 150 millimeter architecture for using EUV and into immersion lithography systems so as to deliver prototypes in 2015. And it will be compatible to 2018 production ramp, of course, if confirmed by the industry in due time. Finally, we are awaiting the rulings from the Fair Trade Commissions of Japan and Korea, which we still expect in time to close our ASML-Cymer merger, still expected to be, again, closed in the first half of this year. As you are aware from our press release, I will personally be stepping down as ASML CEO as of the 1st of July 2013. I will remain Chairman of our holding company until March 31, 2014, when I retire from ASML. This is an anticipated transition as I signed a 2-year extension in Q1 2012, as you know. As the ASML Supervisory Board has appointed Peter Wennink as my successor, this will lead to an orderly transition period and confirms continuity of our business strategy. I would like to say that it has been my great pleasure to have met many of you over the last 9 years already and to have built a relationship based on trust. I will not dwell on this retirement topic at this moment as I'm still the active CEO of the company for the next 3 months. But I look forward to seeing you all these next few quarters as we manage a smooth transition of company management. With that, Peter and I would be pleased to take your questions.