Peter Th. F. M. Wennink
Analyst · Credit Suisse
Thank you, Craig, and welcome to everyone. I would like to take, first, a few minutes at the beginning of our call to provide an overview and some commentary on our third quarter results, our business outlook and our product strategy going forward. The third quarter results came in very much as guided and were largely driven by foundry sales at 60%, with memory system sales following at 40% of total system sales. The core 2 shipments were again highly skewed towards emerging systems at 88% of total system sales, driving the ASP of all systems sold in the third quarter to a record high of EUR 28.2 million versus EUR 24.1 million in the second quarter. Service and field option sales grew significantly to close to EUR 360 million, now including 3 months of Cymer service sales, as well as higher performance-enhancing field option sales. Third quarter bookings came in at EUR 1.4 billion for 51 systems, excluding EUV, with booked ASPs at around EUR 27.7 million, impacted again by a high percentage of emerging systems with relative strength in all sectors. Our system order backlog at the end of Q3 grew further to EUR 1.8 billion, with total systems growing to 59 systems, excluding EUV. The backlog profile at quarter end is nicely balanced between all major sectors driven by increased memory and IDM bookings. As a reminder, we are now guiding the combined ASML and Cymer businesses as one business. For Q4, we expect total sales to be at a record high of about EUR 1.8 billion with a gross margin between 43% and 44%, including an impact for noncash purchase price accounting adjustments related to the Cymer acquisition, without which, our gross margin would've been about 1.6% higher. The short-term impact caused by the noncash purchase price accounting adjustments will cease after Q4. In the fourth quarter, we expect to recognize revenue for 1 of the 3 EUV systems that we expect to ship this year. The first series of such systems will not contribute to profit due to the low utilization of our EUV manufacturing infrastructure, early learning curve costs in our supply chain, and directly resulting from the Cymer acquisition, at the cost of the liability to upgrade the first 11 EUV sources in the field, which cost is now assumed by ASML. Excluding the 1 NXE:3300B, the Q4 gross margin would also be about 1.6% higher. Combined R&D for the quarter will be about EUR 255 million and other income, which again consists of contributions from participants of the Customer Co-Investment Program, of EUR 17 million. Combined SG&A is again expected about EUR 90 million, including EUR 10 million of final restructuring charges not occurring after Q4. As to our business status, Foundry customers are demonstrating sustained litho system requirements and continue with aggressive deliveries in Q4 for volume ramp of the 20 to 16 or 14-nanometer combined nodes. In addition, we have seen healthy order patterns from a broad base of DRAM makers, mostly for technology upgrades due to what appears to be strong demand for mobile DRAM. We are also now seeing the previously anticipated NAND orders for fab capacity additions that have been planned for some time. Deliveries will begin in this quarter and will continue into the first half of 2014. This quarter's order strength, along with expected continued strength in Q4, gives us good visibility into the first half of 2014. Based on these indications, we believe that sales levels in the first half 2014 will be similar to those of the second half of 2013, both excluding EUV. We see growing demand for our Holistic Lithography YieldStar metrology solutions and expect that our combined Holistic Lithography product sales could grow towards 10% of sales. We have shipped just over 100 systems since the product introduction. These metrology systems generate data for our Holistic Lithography products that control overlay, CD and focus for the most advanced and complex process nodes of our customers. EUV system integration work continues to progress steadily, with source and integrated system stability now being the main medium-term focus in support of our current 2013 and '14 shipment plan. We now expect shipment of 3 NXE:3300B systems this year with the first systems in the process of shipment and installation at customer sites. In the fourth quarter, we expect to recognize revenue for 1 NXE:3300B system. The delay of revenue recognition for 2 EUV systems to early 2014 was caused by the delayed delivery and qualification of some system components. Despite the lower-than-planned revenue recognition of EUV systems, we are still able to meet our previously guided 2013 revenues of up to EUR 5.2 billion, due to the underlying strength of our non-EUV business, as mentioned earlier. In last quarter's conference call, we discussed the company's trajectory, which is based on the execution around a very significant R&D investment for technology leadership, execution of the strategy in pursuit of continued cost-effective shrink for our customers, supports the continuation of Moore's Law, and involves 4 pillars: First, it is the continued significant performance improvements of our current XT and NXT architectures, which will enable the most cost effective, leading-edge imaging solutions, addressing imaging complexity over the 20, 16 to 14-nanometer nodes and the related multipath patterning strategies. Secondly, the buildup of our application products, enabling and differentiating further our NXT products in support of sub-20-nanometer process control challenges, many of them related to aforementioned multipath patterning strategies. Third, the timely introduction of EUV, which is the next-generation litho technology necessary to enable continued die shrinks in accordance with Moore's Law, thus producing large cost reduction, power savings and further device performance improvements. And fourth, the capability to ensure, cost effectively, the next wafer size, 450 mm, when the industry requires it. We have begun delivering our new NXT:1970 in support of our customer needs for multipath patterning at advanced logic nodes. This machine maintains world-leading performance of 250 wafers per hour, with overlay achievements at less than 2 nanometer, along with a suite of application process control product packages being adopted in full at a leading foundry logic device manufacturer. By providing these capabilities, we will benefit from the current semiconductor process complexities for 20-nanometer logic and DRAM, and from the added complexity of inserting FinFET transistors at this stage. The complexity of vertical NAND also requires best available overlay and focus capability, and will furthermore require a significant number of emerging systems, as NAND chip volumes will grow. Regarding EUV, light sources for our product -- for our production where the NXE:3300B scanners are being integrated for automated and reliable productivity at customer development fabs. We remain on target to provide 70 wafers per hour performance next year, upgradeable to 125 wafer per hour in 2015. We are now also fully engaged in planning discussions on EUV insertion with logic customers who are seeking the most cost effective and lowest risk lithography solutions for the next-generation product and processes. We have learned from very recent discussions with leading logic customers that they have succeeded to develop 2 lithography introduction strategies for the 10-nanometer node. They will either use a very intensive immersion-centric approach, or an EUV-centric approach for the 10-nanometer critical layers. This successful development of a double-litho strategy approach will allow our logic customers to disclose designed rules to their customers in early 2014 for the next node and to begin this next node development on known lower-risk immersion-based processes, while at the same time closely monitoring EUV performance improvements for potential layer-by-layer insertion when those improvements become available throughout the first half of 2014. This allows an extra 6 to 9 months for a final decision on the EUV introduction strategy through the second half of 2014, instead of the end of 2013, as originally planned. Since the benefits of EUV are clearly understood and any future node will surely require a significant amount of EUV, customers are indicating that they are likely to introduce EUV as soon as possible, in order to gain experience in the full industrialization of EUV into manufacturing. And as mentioned in the previous quarter, the most likely implementation scenarios for EUV appear to be Phase 1 in foundry logic, 1 or 2 layers of EUV for the 10-nanometer node to deliver tighter shrink, better yields and shorter cycle times. With this, we estimate first phase base demand for approximately 12 to 15 EUV units in 2015. In this scenario, a significant number of immersion tools will be additionally required for those critical layers not handled by EUV. Then Phase 2. When the throughput levels of the current roadmap are achieved, then more EUV layers in foundry logic will deliver additional process control, yield cycle time and cost savings. Additionally, up to 3 layers in DRAM will be supported with these throughput levels, and we will then expect to ship our maximum EUV capacity of 25 to 30 units in 2015. Now based upon the EUV progress over the last few quarters, customers have intensified their cooperation with us, allocating investments and resources focused on potential insertion of EUV in leading processes. We will continue to work closely with our customers to determine the most vital insertion points and timing, such that a smooth transition to this necessary new technology is made. And with that, I'd like to conclude. And I will take -- like to take your questions.